An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. - Alexis Divay; Mohamed Masmoudi; Olivier Latry; Cedric Duperrier; Farid Temcamani (Microelectron. Reliab., 2015)

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. - Alexis Divay; Cedric Duperrier; Farid Temcamani; Olivier Latry (Microelectron. Reliab., 2016)

22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. - Zhixing Zhao; Patrick James Artz; Klaus Hempel; Juergen Faul; Tianbing Chen; Richard Taylor; Jerome Mazurier; Carsten Grass; Jan Hoentschel; David Harame; Steffen Lehmann; Luca Lucci; et al. (ESSDERC, 2019)