Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. - Tony Schenk; Stefan Mueller; Uwe Schroeder; Robin Materlik; Alfred Kersch; Mihaela Ioana Popovici; Christoph Adelmann; Sven Van Elshocht; Thomas Mikolajick (ESSDERC, 2013)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)

Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). - Pramoda Vishnumurthy; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Luis Azevedo Antunes; Alfred Kersch (IRPS, 2024)