2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel. - Nur Iwana Mohd Ikhwan; Mohamed Fauzi Packeer Mohamed; Muhammad Firdaus Akbar Jalaludin Khan; Nor Azlin Ghazali; Asrulnizam Abd Manaf; Mohd Syamsul Nasyriq Samsol Baharin; Mohd Hendra bin Hairi; Alhan Farhanah Abd Rahim (RoViSP, 2021)

A Comparative Analysis on Electrical and Photovoltaic Performances of MIS Structures on High Resistivity Silicon with Tunneling Insulator. - Nur Bashirouh binti Attaullah; Nur Zatil Ismah Hashim; Chong Kah Hui; Nor Muzlifah Mahyuddin; Alhan Farhanah Abd Rahim; Mohd Marzaini bin Mohd Rashid; Mundzir Abdullah (RoViSP, 2023)

Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study. - Naeemul Islam; Mohamed Fauzi Packeer Mohamed; Muhammad Firdaus Akbar Jalaludin Khan; Nor Azlin Ghazali; Hiroshi Kawarada; Mohd Syamsul; Alhan Farhanah Abd Rahim; Asrulnizam Abd Manaf (RoViSP, 2023)

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications. - Naeemul Islam; Mohamed Fauzi Packeer Mohamed; Norhawati Ahmad; Muammar Mohamad Isa; Alhan Farhanah Abd Rahim; Khaled Ahmeda (IEEE Access, 2024)