A rail-to-rail, constant-Gm, 1-volt CMOS opamp. - Faramarz Bahmani; Seid Mehdi Fakhraie; Ali Khakifirooz (ISCAS, 2000)

Leakage current reduction by new technique in standby mode. - Amir Amirabadi; Javid Jaffari; Ali Afzali-Kusha; Mehrdad Nourani; Ali Khaki-Firooz (ACM Great Lakes Symposium on VLSI, 2004)

Optimization of the VT control method for low-power ultra-thin double-gate SOI logic circuits. - Davood Shahrjerdi; Bahman Hekmatshoar; Ali Khaki-Firooz; Ali Afzali-Kusha (Integr., 2005)

A very high performance address BUS encoder. - Hadi Parandeh-Afshar; Ali Afzali-Kusha; Ali Khaki-Firooz (ISCAS, 2006)

Low-power multiplier with static decision for input manipulation. - Mohammad Riazati; Ashkan Sobhani; M. Mottaghi-Dastjerdi; Ali Afzali-Kusha; Ali Khaki-Firooz (ISCAS, 2006)

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. - Dimitri A. Antoniadis; Ingvar Åberg; Cáit Ní Chléirigh; Osama M. Nayfeh; Ali Khaki-Firooz; Judy L. Hoyt (IBM J. Res. Dev., 2006)

Transport enhancement techniques for nanoscale MOSFETs. - Ali Khaki-Firooz (2008)

Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. - Ali Khaki-Firooz; Kangguo Cheng; Basanth Jagannathan; Pranita Kulkarni; Jeffrey W. Sleight; Davood Shahrjerdi; Josephine B. Chang; Sungjae Lee; Junjun Li; Huiming Bu; Robert Gauthier 002; Bruce Doris; et al. (ISSCC, 2010)

Extremely thin SOI for system-on-chip applications. - Ali Khaki-Firooz; Kangguo Cheng; Qing Liu; Toshiharu Nagumo; Nicolas Loubet; Alexander Reznicek; James Kuss; J. Gimbert; Raghavasimhan Sreenivasan; Maud Vinet; Laurent Grenouillet; Yannick Le Tiec; et al. (CICC, 2012)

Fully depleted SOI (FDSOI) technology. - Kangguo Cheng; Ali Khaki-Firooz (Sci. China Inf. Sci., 2016)

A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density. - Ali Khakifirooz; Sriram Balasubrahmanyam; Richard Fastow; Kristopher H. Gaewsky; Chang-Wan Ha; Rezaul Haque; Owen Jungroth; Steven Law; Aliasgar S. Madraswala; Binh Ngo; Naveen Prabhu V; Shantanu Rajwade; et al. (ISSCC, 2021)

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density. - Ali Khakifirooz; Eduardo Anaya; Sriram Balasubrahrmanyam; Geoff Bennett; Daniel Castro; John Egler; Kuangchan Fan; Rifat Ferdous; Kartik Ganapathi; Omar Guzman; Chang-Wan Ha; Rezaul Haque; et al. (ISSCC, 2023)