ESD characterization of planar InGaAs devices. - Zhigang Ji; Dimitri Linten; Roman Boschke; Geert Hellings; S. H. Chen; AliReza Alian; D. Zhou; Yves Mols; Tsvetan Ivanov; Jacopo Franco; Ben Kaczer; X. Zhang; et al. (IRPS, 2015)

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. - Abhitosh Vais; Koen Martens; Jacopo Franco; Dennis Lin; AliReza Alian; Philippe Roussel; S. Sioncke; Nadine Collaert; Aaron Thean; Marc M. Heyns; Guido Groeseneken; Kristin De Meyer (IRPS, 2015)

Beyond-Si materials and devices for more Moore and more than Moore applications. - Nadine Collaert; AliReza Alian; Hiroaki Arimura; Geert Boccardi; Geert Eneman; Jacopo Franco; Tsvetan Ivanov; Dennis Lin; Jérôme Mitard; S. Ramesh; R. Rooyackers; Marc Schaekers; et al. (ICICDT, 2016)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. - Vamsi Putcha; Liang Cheng; AliReza Alian; Ming Zhao; Hai Lu; Bertrand Parvais; Niamh Waldron; Dimitri Linten; Nadine Collaert (IRPS, 2021)

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. - Abhitosh Vais; Brent Hsu; Olga Syshchyk; Hao Yu; AliReza Alian; Yves Mols; Komal Vondkar Kodandarama; Bernardette Kunert; Niamh Waldron; Eddy Simoen; Nadine Collaert (IRPS, 2021)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. - Vamsi Putcha; Hao Yu; Jacopo Franco; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert (IRPS, 2022)

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. - Rana Y. El Kashlan; Hao Yu; Ahmad Khaled; Sachin Yadav 001; Uthayasankaran Peralagu; AliReza Alian; Nadine Collaert; Piet Wambacq; Bertrand Parvais (ESSDERC, 2023)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. - Amratansh Gupta; Hao Yu; Sachin Yadav 001; AliReza Alian; Uthavasankaran Peralagu; E.-San Jang; Ying-Chun Kuo; Nadine Collaert; Bertrand Parvais (IRPS, 2025)

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. - Aarti Rathi; Barry J. O'Sullivan; R. ElKashlan; B. Kazemi Esfeh; Arturo Sibaja Hernandez; Hao Yu; AliReza Alian; Sachin Yadav 001; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2025)

Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. - Yi Yang; Hao Yu; Meng-Che Tsai; Wei-Tung Lin; Ying-Chun Kuo; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; et al. (IRPS, 2025)

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. - Hao Yu; R. ElKashlan; Meng-Che Tsai; Yi Yang; Mamoun Guenach; Ying-Chun Kuo; Sachin Yadav 001; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; D. Xiao; Claude Desset; et al. (IRPS, 2025)