Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. - Alison Erlene Viegas; Konstantinos Efstathios Falidas; Tarek Nadi Ismail Ali; Kati Kühnel; Raik Hoffmann; Clemens Mart; Malte Czernohorsky; Johannes Heitmann (IRPS, 2022)