Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; Pierre Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; Alphonse Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IRPS, 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; Alphonse Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)