Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. - Adelmo Ortiz-Conde; Francisco J. García-Sánchez; Juan Muci; Denise C. Lugo Muñoz; Álvaro D. Latorre Rey; Ching-Sung Ho; Juin J. Liou (Microelectron. Reliab., 2009)