Transistor noise in SiGe HBT RF technology. - Guofu Niu; Zhenrong Jin; John D. Cressler; Rao Rapeta; Alvin J. Joseph; David L. Harame (IEEE J. Solid State Circuits, 2001)

40-Gb/s circuits built from a 120-GHz fT SiGe technology. - Greg G. Freeman; Mounir Meghelli; Young Kwark; Steven Zier; Alexander V. Rylyakov; Michael Sorna; Todd Tanji; Oswin M. Schreiber; Keith Walter; Jae-Sung Rieh; Basanth Jagannathan; Alvin J. Joseph; et al. (IEEE J. Solid State Circuits, 2002)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications. - Jeffrey B. Johnson; Alvin J. Joseph; David C. Sheridan; Ramana M. Maladi; Per-Olof Brandt; Jonas Persson; Jesper Andersson; Are Bjorneklett; Ulrika Persson; Fariborz Abasi; Lars Tilly (IEEE J. Solid State Circuits, 2004)

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. - Alvin J. Joseph; David L. Harame; Basanth Jagannathan; Douglas D. Coolbaugh; David C. Ahlgren; John Magerlein; Louis D. Lanzerotti; Natalie B. Feilchenfeld; Stephen A. St. Onge; James S. Dunn; Edward J. Nowak (Proc. IEEE, 2005)

SiGe BiCMOS Trends - Today and Tomorrow. - James S. Dunn; David L. Harame; Alvin J. Joseph; Stephen A. St. Onge; Natalie B. Feilchenfeld; Louis D. Lanzerotti; Bradley A. Orner; Ephrem G. Gebreselasie; Jeffrey B. Johnson; Douglas D. Coolbaugh; Rick Rassel; Marwan Khater (CICC, 2006)

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications. - Alvin J. Joseph; John D. Gillis; Mark Doherty; Peter J. Lindgren; Rosemary A. Previti-Kelly; Ramana M. Malladi; Ping-Chuan Wang; Mete Erturk; Hanyi Ding; Ephrem G. Gebreselasie; Michael J. McPartlin; James S. Dunn (IBM J. Res. Dev., 2008)

A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design. - X. Shawn Wang; Xin Wang 031; Fei Lu 004; Li Wang 058; Rui Ma 003; Zongyu Dong; Li Sun; Albert Z. Wang; C. Patrick Yue; Dawn Wang; Alvin J. Joseph (CICC, 2013)

Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection. - X. Shawn Wang; Xin Wang 031; Fei Lu 004; Chen Zhang 017; Zongyu Dong; Li Wang 058; Rui Ma 003; Zitao Shi; Albert Z. Wang; Mau-Chung Frank Chang; Dawn Wang; Alvin J. Joseph; et al. (IEEE J. Solid State Circuits, 2014)

2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35um SiGe BiCMOS. - Chaojiang Li; Xiaoxia Wang; Vibhor Jain; Hanyi Ding; Myra Boenke; Dawn Wang; Randy Wolf; Alvin J. Joseph (ASICON, 2015)

5G mm-Wave front-end-module design with advanced SOI process. - Chaojiang Li; Min Wang; Taiyun Chi; Arvind Kumar; Myra Boenke; Dawn Wang; Ned Cahoon; Anirban Bandyopadhyay; Alvin J. Joseph; Hua Wang 006 (ASICON, 2017)

SiGe HBTs with ${f_{T}/f_{ max} , sim , 375/510GHz}$ Integrated in 45nm PDSOI CMOS. - John J. Pekarik; Vibhor Jain; Crystal Kenney; Judson Holt; Shweta Khokale; Sudesh Saroop; Jeffrey B. Johnson; Kenneth J. Stein; Viorel Ontalus; Christopher Durcan; Mona Nafari; Tayel Nesheiwat; et al. (BCICTS, 2021)

SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. - Alvin J. Joseph; Vibhor Jain; John J. Pekarik; Ajay Raman; Shafi Syed; Liu Hang; Ned Cahoon; Randy Wolf; Venkat Vanukuru; Elan Veeramani; Beng Woon Lim; Uppili S. Raghunathan; et al. (BCICTS, 2022)