IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. - Amador Pérez-Tomás; Xavier Jordà; Philippe Godignon; Jose Luis Gálvez; Miquel Vellvehí; José Millán (Microelectron. J., 2004)

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. - Amador Pérez-Tomás; Michael R. Jennings; M. Davis; Vishal Shah; T. Grasby; James Anthony Covington; Philip A. Mawby (Microelectron. J., 2007)

Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. - Amador Pérez-Tomás; Marcel Placidi; Abel Fontserè; P. M. Gammon; Michael R. Jennings (Microelectron. Reliab., 2011)

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; J. M. Parsey; Peter Moens (ESSDERC, 2012)

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; Herbert De Vleeschouwer; John M. Parsey; Peter Moens (Microelectron. Reliab., 2012)

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1). - Abel Fontserè; A. Pérez-Tomás; Marcel Placidi; N. Baron; S. Chenot; Yvon Cordier; J. C. Moreno (Microelectron. Reliab., 2012)