Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. - Amir Regev; Alessandro Bricalli; Giuseppe Piccolboni; Alexandre Valentian; Thomas Mesquida; Gabriel Molas; Jean-François Nodin (AICAS, 2020)

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. - Wolfgang Goes; D. Green; Philippe Blaise; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Molas; Jean-Francois Nodin (IMW, 2021)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. - Vivek Parmar; Sandeep Kaur Kingra; Deepak Verma; Digamber Pandey; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Pares; Laurent Grenouillet; Jean-François Nodin; Manan Suri (IMW, 2023)

Fully Binarized, Parallel, RRAM-Based Computing Primitive for In-Memory Similarity Search. - Sandeep Kaur Kingra; Vivek Parmar; Deepak Verma; Alessandro Bricalli; Giuseppe Piccolboni; Gabriel Molas; Amir Regev; Manan Suri (IEEE Trans. Circuits Syst. II Express Briefs, 2023)

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors. - Henriette Padberg; Amir Regev; Giuseppe Piccolboni; Alessandro Bricalli; Gabriel Molas; Jean-Francois Nodin; Shahar Kvatinsky (IEEE Trans. Circuits Syst. II Express Briefs, 2024)