Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI - LVT and RVT Configurations. - Amit Karel; Mariane Comte; Jean-Marc Gallière; Florence Azaïs; Michel Renovell (ISVLSI, 2016)

Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect. - Amit Karel; Mariane Comte; Jean-Marc Gallière; Florence Azaïs; Michel Renovell (LATS, 2016)

Detection of resistive open and short defects in FDSOI under delay-based test: Optimal VDD and body biasing conditions. - Amit Karel; Florence Azaïs; Mariane Comte; Jean-Marc Gallière; Michel Renovell; Keshav Singh (ETS, 2017)

Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI Technology. - Amit Karel; Florence Azaïs; Mariane Comte; Jean-Marc Gallière; Michel Renovell; Keshav Singh (ISVLSI, 2017)

Resistive Bridging Defect Detection in Bulk, FDSOI and FinFET Technologies. - Amit Karel; Mariane Comte; Jean-Marc Gallière; Florence Azaïs; Michel Renovell (J. Electron. Test., 2017)

Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologies. - Amit Karel; Florence Azaïs; Mariane Comte; Jean-Marc Gallière; Michel Renovell (LATS, 2018)

Analytical Models for the Evaluation of Resistive Short Defect Detectability in Presence of Process Variations: Application to 28nm Bulk and FDSOI Technologies. - Amit Karel; Florence Azaïs; Mariane Comte; Jean-Marc Gallière; Michel Renovell (J. Electron. Test., 2019)