A study of single-phase to three-phase cycloconverters using PSPICE. - Vineeta Agrawal; Anant K. Agarwal; Krishna Kant 002 (IEEE Trans. Ind. Electron., 1992)

Design Strategies for Rugged SiC Power Devices. - Diang Xing; Tianshi Liu; Susanna Yu; Minseok Kang; Arash Salemi; Marvin H. White; Anant K. Agarwal (IRPS, 2019)

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. - Tianshi Liu; Shengnan Zhu; Susanna Yu; Diang Xing; Arash Salemi; Minseok Kang; Kristen Booth; Marvin H. White; Anant K. Agarwal (IRPS, 2020)

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. - Susanna Yu; Tianshi Liu; Shengnan Zhu; Diang Xing; Arash Salemi; Minseok Kang; Kristen Booth; Marvin H. White; Anant K. Agarwal (IRPS, 2020)

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. - Shengnan Zhu; Tianshi Liu; Marvin H. White; Anant K. Agarwal; Arash Salemi; David Sheridan (IRPS, 2021)

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology. - Tianshi Liu; Hua Zhang; Sundar Babu Isukapati; Emaran Ashik; Adam J. Morgan; Bongmook Lee; Woongje Sung; Marvin H. White; Ayman A. Fayed; Anant K. Agarwal (MWSCAS, 2021)

Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. - Susanna Yu; Marvin H. White; Anant K. Agarwal (IEEE Access, 2021)

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. - Emran K. Ashik; Sundar Babu Isukapati; Hua Zhang; Tianshi Liu; Utsav Gupta; Adam J. Morgan; Veena Misra; Woongje Sung; Ayman A. Fayed; Anant K. Agarwal; Bongmook Lee (IRPS, 2022)

Defects in 4H-SiC epilayers affecting device yield and reliability. - Robert Stahlbush; Nadeemullah A. Mahadik; Peter Bonanno; Jake Soto; Bruce Odekirk; Woongje Sung; Anant K. Agarwal (IRPS, 2022)

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology. - Hua Zhang; Tianshi Liu; Utsav Gupta; Sundar Babu Isukapati; Emran K. Ashik; Adam J. Morgan; Bongmook Lee; Woongje Sung; Anant K. Agarwal; Ayman A. Fayed (MWSCAS, 2022)

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs. - Limeng Shi; Shengnan Zhu; Jiashu Qian; Michael Jin; Monikuntala Bhattacharya; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori; Tianshi Liu (IRPS, 2023)

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. - Shengnan Zhu; Limeng Shi; Michael Jin; Jiashu Qian; Monikuntala Bhattacharya; Hema Lata Rao Maddi; Marvin H. White; Anant K. Agarwal; Tianshi Liu; Atsushi Shimbori; Chingchi Chen (IRPS, 2023)

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress. - Jiashu Qian; Limeng Shi; Michael Jin; Monikuntala Bhattacharya; Hengyu Yu; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori; Tianshi Liu; Shengnan Zhu (IRPS, 2024)

Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. - Limeng Shi; Jiashu Qian; Michael Jin; Monikuntala Bhattacharya; Hengyu Yu; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori (IRPS, 2024)

Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching. - Seung Yup Jang; Justin Lynch; Adam J. Morgan; Dinuth C. Y. B. Yapa Mudiyanselage; Woongje Sung; Limeng Shi; Anant K. Agarwal (IRPS, 2025)