High-quality synthetic 2D transition metal dichalcogenide semiconductors. - Dumitru Dumcenco; Dmitry Ovchinnikov; Kolyo Marinov; Andras Kis (ESSDERC, 2016)

Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. - Agata Piacentini; Daniel Schneider; Martin Otto 003; Bárbara Canto; Zhenyu Wang; Aleksandra Radenovic; Andras Kis; Max Christian Lemme; Daniel Neumaier (DRC, 2021)

MoS2/graphene Lateral Heterostructure Field Effect Transistors. - Daniel S. Schneider 001; Eros Reato; Leonardo Lucchesi; Zhenyu Wang; Agata Piacetini; Jens Bolten; Damiano Marian; Enrique G. Marin; Aleksandra Radenovic; Zhenxing Wang; Gianluca Fiori; Andras Kis; et al. (DRC, 2021)