A 10-Gb/s high-isolation, 16×16 crosspoint switch implemented with AlGaAs/GaAs HBT's. - Andre G. Metzger; Charles E. Chang; Ken D. Pedrotti; Steve M. Beccue; Keh-Chung Wang; Peter M. Asbeck (IEEE J. Solid State Circuits, 2000)

An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers. - Andre G. Metzger; Ravi Ramanathan; Jiang Li; Hsiang-Chih Sun; Cristian Cismaru; Hongxiao Shao; Lance Rushing; Kenneth P. Weller; Ce-Jun Wei; Yu Zhu; Alexei Klimashov; Yevgeniy A. Tkachenko; et al. (IEEE J. Solid State Circuits, 2007)

Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers. - Andre G. Metzger; Vincenzo d'Alessandro; Niccolò Rinaldi; Peter J. Zampardi (Microelectron. Reliab., 2013)

Partition-based approach to parametric dynamic compact thermal modeling. - Lorenzo Codecasa; Vincenzo d'Alessandro; Alessandro Magnani; Niccolò Rinaldi; Andre G. Metzger; Robin Bornoff; John Parry (Microelectron. Reliab., 2017)

A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length. - Bin Li; Andre G. Metzger; Cristian Cismaru; Yingying Yang (BCICTS, 2023)