Characterization and Modeling of Gate-Induced-Drain-Leakage. - Fabien Gilibert; Denis Rideau; Alexandre Dray; François Agut; Michel Minondo; Andre Juge; Pascal Masson; Rachid Bouchakour (IEICE Trans. Electron., 2005)

Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations. - Smriti Joshi; Anne Lombardot; Philippe Flatresse; Carmelo D'Agostino; Andre Juge; Edith Beigné; Stéphane Girard (J. Low Power Electron., 2012)

Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. - Omar Jonani Franco Piliado; Giancarlo Castaneda; Andre Juge; Gérard Ghibaudo (J. Low Power Electron., 2014)

Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model. - Salim El Ghouli; Patrick Scheer; Michel Minondo; Andre Juge; Thierry Poiroux; Jean-Michel Sallese; Christophe Lallement (MIXDES, 2016)

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. - Krishna Pradeep; Theano A. Karatsori; Thierry Poiroux; Andre Juge; Patrick Scheer; Gilles Gouget; Emmanuel Josse; Gérard Ghibaudo (ESSDERC, 2018)

Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA. - Salim El Ghouli; Wladyslaw Grabinski; Jean-Michel Sallese; Andre Juge; Christophe Lallement (MIXDES, 2018)

A self-sustaining Single Photon Avalanche Diode Model. - Sven Rink; V. Quenette; Jean-Robert Manouvrier; Andre Juge; Gilles Gouget; Denis Rideau; R. A. Bianchi; Dominique Golanski; Bastien Mamdy; Jean-Baptiste Kammerer; Wilfried Uhring; Christophe Lallement; et al. (ESSDERC, 2022)

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. - Denis Rideau; Wilfried Uhring; R. A. Bianchi; Rémi Helleboid; Gabriel Mugny; Jérémy Grebot; Jean-Robert Manouvrier; R. Neri; F. Brun; Mohammadreza Dolatpoor Lakeh; Sven Rink; Jean-Baptiste Kammerer; et al. (ESSDERC, 2023)