Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. - Benoit Lambert; Nathalie Malbert; Nathalie Labat; Frédéric Verdier; André Touboul; P. Huguet; R. Bonnet; G. Pataut (Microelectron. Reliab., 2001)

Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. - Dean Lewis; Vincent Pouget; Thomas Beauchêne; Hervé Lapuyade; Pascal Fouillat; André Touboul; Felix Beaudoin; Philippe Perdu (Microelectron. Reliab., 2001)

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. - Nathalie Labat; Nathalie Malbert; Benoit Lambert; André Touboul; F. Garat; B. Proust (Microelectron. Reliab., 2002)

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. - Mohamed Belhaj; Cristell Maneux; Nathalie Labat; André Touboul; Philippe Bove (Microelectron. Reliab., 2003)

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

Editorial. - Nathalie Labat; André Touboul (Microelectron. Reliab., 2003)

1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. - J. C. Martin; Cristell Maneux; Nathalie Labat; André Touboul; Muriel Riet; S. Blayac; M. Kahn; Jean Godin (Microelectron. Reliab., 2003)

Study of the ESD defects impact on ICs reliability. - Fabien Essely; Corinne Bestory; Nicolas Guitard; Marise Bafleur; A. Wislez; E. Doche; Philippe Perdu; André Touboul; Dean Lewis (Microelectron. Reliab., 2004)

On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. - Brice Grandchamp; Cristell Maneux; Nathalie Labat; André Touboul; Thomas Zimmer (Microelectron. Reliab., 2004)

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. - Nathalie Labat; Nathalie Malbert; Cristell Maneux; André Touboul (Microelectron. Reliab., 2004)

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. - Nicolas Guitard; Fabien Essely; David Trémouilles; Marise Bafleur; Nicolas Nolhier; Philippe Perdu; André Touboul; Vincent Pouget; Dean Lewis (Microelectron. Reliab., 2005)

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. - Naoufel Ismail; Nathalie Malbert; Nathalie Labat; André Touboul; Jean-Luc Muraro; F. Brasseau; D. Langrez (Microelectron. Reliab., 2005)

Application of various optical techniques for ESD defect localization. - Fabien Essely; Frédéric Darracq; Vincent Pouget; Mustapha Remmach; Felix Beaudoin; Nicolas Guitard; Marise Bafleur; Philippe Perdu; André Touboul; Dean Lewis (Microelectron. Reliab., 2006)

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. - A. Sozza; Arnaud Curutchet; Christian Dua; Nathalie Malbert; Nathalie Labat; André Touboul (Microelectron. Reliab., 2006)

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. - Mustapha Faqir; Giovanni Verzellesi; Fausto Fantini; Francesca Danesin; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni; Anna Cavallini; Antonio Castaldini; Nathalie Labat; André Touboul; Christian Dua (Microelectron. Reliab., 2007)

Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. - M. L. Bourqui; Laurent Béchou; Olivier Gilard; Yannick Deshayes; Pamela Del Vecchio; L. S. How; F. Rosala; Yves Ousten; André Touboul (Microelectron. Reliab., 2008)