Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications. - Dan Denninghoff; F. Erdem Arkun; Jeong-Sun Moon; Haidang Tran; Andrea L. Corrion; Georges Siddiqi; David Fanning; Micha Fireman; J. Tai; Joel Wong; Bob Grabar; C. Dao; et al. (BCICTS, 2023)

Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process. - David Fanning; Andrea L. Corrion; Georges Siddiqi; Souheil Nadri; Dan Denninghoff; F. Erdem Arkun; Sadaf Dadafshar; Ignacio Ramos; Harris Moyer; Andy Fu; John Carlson; Shyam Bharadwaj (BCICTS, 2023)

W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. - F. Erdem Arkun; Dan Denninghoff; Haidang Tran; Ryan Tran; Nicholas C. Miller; Michael Elliott; Ryan Gilbert; Ivan Milosavljevic; Georges Siddiqi; Micha Fireman; Andrea L. Corrion; David Fanning; et al. (DRC, 2023)