System-Level Assessment of Dynamic Effects in GaN-based Power Converters. - Andrea Minetto; Bernd Deutschmann; Oliver Häberlen; Gilberto Curatola (PRIME, 2019)

System-level evaluation of dynamic effects in a GaN-based class-E power amplifier. - Andrea Minetto; Bernd Deutschmann; Oliver Häberlen; Gilberto Curatola (Integr., 2020)

Charge Trapping in GaN Power Transistors: Challenges and Perspectives. - Matteo Meneghini; Nicola Modolo; Arianna Nardo; Carlo De Santi; Andrea Minetto; Luca Sayadi; Christian Koller; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni (BCICTS, 2021)

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. - Nicola Modolo; Andrea Minetto; Carlo De Santi; Luca Sayadi; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2021)

Modeling Hot-Electron Trapping in GaN-based HEMTs. - Nicola Modolo; Carlo De Santi; Andrea Minetto; Luca Sayadi; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. - D. Wieland; S. Ofner; Manuel Stabentheiner; Boris Butej; Christian Koller; J. Sun; Andrea Minetto; Korbinian Reiser; Oliver Häberlen; Michael Nelhiebel; Michael Glavanovics; Dionyz Pogany; et al. (IRPS, 2023)