Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. - Andrea Natale Tallarico; Susanna Reggiani; Paolo Magnone; Giuseppe Croce; Riccardo Depetro; P. Gattari; Enrico Sangiorgi; Claudio Fiegna (Microelectron. Reliab., 2017)

TCAD investigation on hot-electron injection in new-generation technologies. - Susanna Reggiani; Mattia Rossetti; Antonio Gnudi; Andrea Natale Tallarico; Antonio Molfese; Stefano Manzini; Riccardo Depetro; Giuseppe Croce; Enrico Sangiorgi; Claudio Fiegna (Microelectron. Reliab., 2018)

Characterization and Modeling of BTI in SiC MOSFETs. - Davide Cornigli; Andrea Natale Tallarico; Susanna Reggiani; Claudio Fiegna; Enrico Sangiorgi; Luis Sanchez; Carlos Valdivieso; Giuseppe Consentino; Felice Crupi (ESSDERC, 2019)

TCAD predictions of hot-electron injection in p-type LDMOS transistors. - Federico Giuliano; Riccardo Depetro; Giuseppe Croce; Andrea Natale Tallarico; Susanna Reggiani; Antonio Gnudi; Enrico Sangiorgi; Claudio Fiegna; Mattia Rossetti; Antonio Molfese; Stefano Manzini (ESSDERC, 2019)

An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation. - Matteo Pizzotti; Marco Crescentini; Andrea Natale Tallarico; Aldo Romani (ICECS, 2019)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. - Andrea Natale Tallarico; Susanna Reggiani; Riccardo Depetro; Giuseppe Croce; Enrico Sangiorgi; Claudio Fiegna (IRPS, 2020)

A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter. - Giuseppe Capasso; Mauro Zanuccoli; Andrea Natale Tallarico; Claudio Fiegna (ESSDERC, 2022)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. - Andrea Natale Tallarico; M. Millesimo; U. Ibrar; Enrico Sangiorgi; Claudio Fiegna; T.-Y. Yang; J.-S. Wu; H. Iwai; E.-Y. Chang (IRPS, 2025)