Modeling and reliability of innovative flash memories. - Andrea Padovani (2009)

Fundamental reliability issues of advanced charge-trapping Flash memory devices. - Luca Larcher; Andrea Padovani (ICECS, 2010)

High-kappa related reliability issues in advanced non-volatile memories. - Luca Larcher; Andrea Padovani (Microelectron. Reliab., 2010)

Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. - Francesco Maria Puglisi; Paolo Pavan; Andrea Padovani; Luca Larcher; Gennadi Bersuker (ESSDERC, 2012)

Connecting RRAM performance to the properties of the hafnia-based dielectrics. - Gennadi Bersuker; Brian Butcher; David Gilmer; Paul Kirsch; Luca Larcher; Andrea Padovani (ESSDERC, 2013)

Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. - Francesco Maria Puglisi; Paolo Pavan; Andrea Padovani; Luca Larcher (ESSDERC, 2013)

A compact model of hafnium-oxide-based resistive random access memory. - Francesco Maria Puglisi; Paolo Pavan; Andrea Padovani; Luca Larcher (ICICDT, 2013)

Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations. - Andrea Padovani; Luca Larcher; Paolo Pavan (Microelectron. J., 2013)

Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. - Francesco Maria Puglisi; Paolo Pavan; Luca Larcher; Andrea Padovani (ESSDERC, 2014)

Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. - Francesco Maria Puglisi; Luca Larcher; Andrea Padovani; Paolo Pavan (ESSDERC, 2015)

A microscopic physical description of RTN current fluctuations in HfOx RRAM. - Francesco Maria Puglisi; Paolo Pavan; Luca Vandelli; Andrea Padovani; Matteo Bertocchi; Luca Larcher (IRPS, 2015)

Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. - Luca Larcher; Francesco Maria Puglisi; Andrea Padovani; Luca Vandelli; Paolo Pavan (PATMOS, 2016)

Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control. - Francesco Maria Puglisi; Luca Larcher; Andrea Padovani; Paolo Pavan (IEEE J. Emerg. Sel. Topics Circuits Syst., 2016)

A multiscale modeling approach for the simulation of OxRRAM devices. - Andrea Padovani; Luca Larcher; Jiyong Woo; Hyunsang Hwang (NVMTS, 2017)

Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM. - Mouhamad Alayan; Elisa Vianello; Barbara De Salvo; Luca Perniola; Andrea Padovani; Luca Larcher (IEEE Des. Test, 2017)

Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. - David Z. Gao; Jack Strand; Al-Moatasem El-Sayed; Alexander L. Shluger; Andrea Padovani; Luca Larcher (IRPS, 2018)

Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach. - Andrea Padovani; Luca Larcher (IRPS, 2018)

Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. - Fernando Leonel Aguirre; Andrea Padovani; Alok Ranjan 001; Nagarajan Raghavan; Nahuel Vega; Nahuel Muller; Sebastián Matías Pazos; Mario Debray; Joel Molina Reyes; Kin Leong Pey; Felix Palumbo (IRPS, 2019)

Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. - Andrea Padovani; Milan Pesic; Mondol Anik Kumar; Pieter Blomme; Alexandre Subirats; Senthil Vadakupudhupalayam; Zunaid Baten; Luca Larcher (IRPS, 2019)

Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. - Chen Wu; Adrian Vaisman Chasin; Andrea Padovani; Alicja Lesniewska; Steven Demuynck; Kris Croes (IRPS, 2019)

Variability sources and reliability of 3D - FeFETs. - Milan Pesic; Bastien Beltrando; Andrea Padovani; Shruba Gangopadhyay; Muthukumar Kaliappan; Michael Haverty; Marco A. Villena; Enrico Piccinini; Matteo Bertocchi; Tony Chiang; Luca Larcher; Jack Strand; et al. (IRPS, 2021)

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. - Milan Pesic; Andrea Padovani; Tommaso Rollo; Bastien Beltrando; Jack Strand; Parnika Agrawal; Alexander L. Shluger; Luca Larcher (IMW, 2022)

Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). - Andrea Padovani; Milan Pesic; Federico Nardi; Valerio Milo; Luca Larcher; Mondol Anik Kumar; Zunaid Baten (IRPS, 2022)

Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. - Milan Pesic; Bastien Beltrando; Andrea Padovani; Toshihiko Miyashita; Nam-Sung Kim; Luca Larcher (IRPS, 2022)

Towards a Universal Model of Dielectric Breakdown. - Andrea Padovani; Paolo La Torraca; Jack Strand; Alexander L. Shluger; Valerio Milo; Luca Larcher (IRPS, 2023)

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. - Milan Pesic; Bastien Beltrando; Tommaso Rollo; Cristian Zambelli; Andrea Padovani; Rino Micheloni; Rita Maji; Lisa Enman; Mark Saly; Yang Ho Bae; Jung-Bae Kim; Dong Kil Yim; et al. (IRPS, 2023)

Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. - Bastien Beltrando; Marco A. Villena; Mondol Anik Kumar; Shruba Gangopadhyay; Deepak Kamalanathan; E. Smith; Nasrin Kazem; Ghazal Saheli; Stephen Weeks; Michael Haverty; Muthukumar Kaliappan; Andrea Padovani; et al. (IMW, 2024)

Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability. - Bruno Coppolelli; Davide Cornigli; Zheyuan Chen; Andrea Padovani; Sara Vecchi; Yanliu Dang; Luc Thomas; Luca Vandelli; Jianxin Lei; Naomi Yoshida; Renu Whig; Federico Nardi; et al. (IRPS, 2025)

Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance. - Andrea Padovani; Nashrah Afroze; Yu-Hsin Kuo; Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Mengkun Tian; Asif Khan; Jihoon Choi; Jun Hee Lee; Luca Larcher; Gaurav Thareja (IRPS, 2025)

Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. - Priyankka Gundlapudi Ravikumar; Andrea Padovani; Prasanna Venkatesan Ravindran; Chinsung Park; Nashrah Afroze; Mengkun Tian; Suman Datta; Shimeng Yu; Luca Larcher; Gaurav Thareja; Asif Khan (IRPS, 2025)

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)

A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization. - Sara Vecchi; Vikram Bhosle; Andrea Palmieri; Davide Cornigli; Fabrizio Buscemi; Andrea Padovani; Deven Raj; Andrew Cockburn; Lucien Date; Gaurav Thareja; Federico Nardi; Luca Larcher (IRPS, 2025)