Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials. - Benjamin März; Andreas Graff; Robert Klengel; Matthias Petzold (Microelectron. Reliab., 2014)

Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures. - Michél Simon-Najasek; Susanne Hübner; Frank Altmann; Andreas Graff (Microelectron. Reliab., 2014)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. - Mikael Broas; Andreas Graff; Michél Simon-Najasek; David Poppitz; Frank Altmann; Helmut Jung; Hervé Blanck (Microelectron. Reliab., 2016)

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. - Maximilian Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Michael Mikulla; Andreas Graff; Michél Simon-Najasek (Microelectron. Reliab., 2017)

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. - Andreas Graff; Michél Simon-Najasek; Frank Altmann; Ján Kuzmík; Dagmar Gregusová; S. Hascik; Helmut Jung; T. Baur; Jan Grünenpütt; Hervé Blanck (Microelectron. Reliab., 2017)

Physical failure analysis methods for wide band gap semiconductor devices. - Andreas Graff; Michél Simon-Najasek; David Poppitz; Frank Altmann (IRPS, 2018)

Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices. - C. Monachon; Marcin Stefan Zielinski; J. Berney; D. Poppitz; Andreas Graff; Steffen Breuer; Lutz Kirste (IRPS, 2018)

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Tobias Kemmer; Helmer Konstanzer; Andreas Graff; Michél Simon-Najasek; Rüdiger Quay (Microelectron. Reliab., 2018)

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. - Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Fabiana Rampazzo; Daniele Marcon; Veronica Gao Zhan; Francesca Chiocchetta; Andreas Graff; Frank Altmann; Michél Simon-Najasek; David Poppitz (IRPS, 2020)

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. - Maximilian Dammann; Martina Baeumler; Tobias Kemmer; Helmer Konstanzer; Peter Brückner; Sebastian Krause; Andreas Graff; Michél Simon-Najasek (IRPS, 2021)