A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

Complementary RF-LDMOS transistors realized with standard CMOS implantations. - Andreas Mai; Holger Rücker (ESSDERC, 2012)

Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technology. - Andreas Mai; Alexander Fox (ESSDERC, 2015)

200 mm Wafer level graphene transfer by wafer bonding technique. - Mesut Inac; Grzegorz Lupina; Matthias Wietstruck; Marco Lisker; Mirko Fraschke; Andreas Mai; Fabio Coccetti; Mehmet Kaynak (ESSDERC, 2017)

Photonic thermal sensor integration towards electronic-photonic-IC technologies. - Andreas Mai; Siegfried Bondarenko; Christian Mai; Patrick Steglich (ESSDERC, 2019)

High Performance Electronic Design Education - from Technology towards High Frequency Chip Sets. - Andreas Mai; Philipp Scholz; Gerhard G. Fischer; Friedel Gerfers (FIE, 2019)

Graphene Research in 200 mm CMOS Pilot Line. - Mindaugas Lukosius; Rasuole Lukose; Marco Lisker; Giuseppe Luongo; M. Elviretti; Andreas Mai; Christian Wenger (MIPRO, 2022)

Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review. - Patrick Steglich; Giulia Lecci; Andreas Mai (Sensors, 2022)