Quality assessment of thin oxides using constant and ramped stress measurements. - Gunnar Diestel; Andreas Martin 002; Martin Kerber; Alfred Schlemm; Horst Erlenmaier; Bernhard Murr; Andreas Preussger (Microelectron. Reliab., 2001)

Editorial. - Andreas Martin 002 (Microelectron. Reliab., 2001)

Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability. - Andreas Martin 002; Jochen von Hagen; Glenn B. Alers (Microelectron. Reliab., 2003)

An introduction to fast wafer level reliability monitoring for integrated circuit mass production. - Andreas Martin 002; Rolf-Peter Vollertsen (Microelectron. Reliab., 2004)

Reliability of gate dielectrics and metal-insulator-metal capacitors. - Andreas Martin 002 (Microelectron. Reliab., 2005)

Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications. - Daniel Beckmeier; Andreas Martin 002 (Microelectron. Reliab., 2016)

Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. - Andreas Martin 002; Rolf-Peter Vollertsen; A. Mitchell; M. Traving; D. Beckmeier; H. Nielen (Microelectron. Reliab., 2016)

Degradation and recovery of variability due to BTI. - Christian Schlünder; Jörg Berthold; Fabian Proebster; Andreas Martin 002; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2016)

Variation-resilient quantifiable plasma process induced damage monitoring. - D. Beckmeier; Andreas Martin 002 (Microelectron. Reliab., 2018)

A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs. - Andreas Martin 002; Angelika Kamp (IRPS, 2020)

Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited). - Andreas Martin 002 (IRPS, 2022)