CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices. - Bernhard Mittermeier; Andreas Dörfler; Anna Horoschenkoff; Rajesh Katoch; Christina Schindler; Andreas Ruediger; Gitanjali Kolhatkar (Adv. Intell. Syst., 2019)

Fully Inkjet-Printed Carbon Nanotube-PDMS-Based Strain Sensor: Temperature Response, Compressive and Tensile Bending Properties, and Fatigue Investigations. - Johannes Jehn; Patrick Oser; M. A. Maz Courrau; Michael Kaiser; Datong Wu; Christian Ulrich Grosse; Ulrich Moosheimer; Andreas Ruediger; Christina Schindler (IEEE Access, 2021)

Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing. - Abdelouadoud El Mesoudy; Gwénaëlle Lamri; Raphaël Dawant; Javier Arias-Zapata; Pierre Gliech; Yann Beilliard; Serge Ecoffey; Andreas Ruediger; Fabien Alibart; Dominique Drouin (CoRR, 2021)