Si n-TFETs on ultra thin body with suppressed ambipolarity. - Chang Liu; Qinghua Han; Gia Vinh Luong; Keyvan Narimani; Stefan Glass; Andreas T. Tiedemann; Stefan Trellenkamp; Wenjie Yu; Xi Wang; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2016)

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. - Gia Vinh Luong; Sebastiano Strangio; Andreas T. Tiedemann; Patric Bernardy; Stefan Trellenkamp; Pierpaolo Palestri; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)

4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. - Fengben Xi; Yi Han; Andreas T. Tiedemann; Detlev Grützmacher; Qing-Tai Zhao (ESSDERC, 2021)