Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM. - Andrei Zenkevich; Yu. Lebedinskii; G. Scarel; Marco Fanciulli; Andrey Baturin; N. Lubovin (Microelectron. Reliab., 2007)