Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations. - Smriti Joshi; Anne Lombardot; Philippe Flatresse; Carmelo D'Agostino; Andre Juge; Edith Beigné; Stéphane Girard (J. Low Power Electron., 2012)

A gate level methodology for efficient statistical leakage estimation in complex 32nm circuits. - Smriti Joshi; Anne Lombardot; Marc Belleville; Edith Beigné; Stéphane Girard (DATE, 2013)