Innovative GeS2/Sb2Te3 based phase change memory for low power applications. - Julia Kluge; Anthonin Verdy; Gabriele Navarro; Serge Blonkowski; Veronique Sousa; Sophie Chevalliez; Philippe Kowalczyk; Mathieu Bernard; Nicolas Bernier; Guillaume Bourgeois; Niccolo Castellani; Pierre Noe; et al. (NVMTS, 2017)

OTS selector devices: Material engineering for switching performance. - Marie Claire Cyrille; Anthonin Verdy; Gabriele Navarro; Guillaume Bourgeois; Julien Garrione; Mathieu Bernard; C. Sabbione; Pierre Noe; Etienne Nowak (ICICDT, 2018)

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance. - Anthonin Verdy; Gabriele Navarro; Mathieu Bernard; Sophie Chevalliez; Niccolo Castellani; Emmanuel Nolot; Julien Garrione; Pierre Noe; Guillaume Bourgeois; Veronique Sousa; Marie Claire Cyrille; Etienne Nowak (IRPS, 2018)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)