Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. - Matthias Beichele; Anton J. Bauer; Heiner Ryssel (Microelectron. Reliab., 2001)

Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. - Michael P. M. Jank; Martin Lemberger; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2001)

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. - S. Strobel; Anton J. Bauer; Matthias Beichele; Heiner Ryssel (Microelectron. Reliab., 2001)

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. - Albena Paskaleva; Martin Lemberger; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2003)

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. - Martin Lemberger; Albena Paskaleva; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2005)

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. - Albena Paskaleva; Anton J. Bauer; Martin Lemberger (Microelectron. Reliab., 2005)

Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. - Martin Lemberger; A. Baunemann; Anton J. Bauer (Microelectron. Reliab., 2007)

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. - Albena Paskaleva; Martin Lemberger; Anton J. Bauer (Microelectron. Reliab., 2007)

Quantitative oxide charge determination by photocurrent analysis. - Mathias Rommel; Anton J. Bauer; Heiner Ryssel (Microelectron. Reliab., 2007)

Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. - Martin Le-Huu; Holger Schmitt; Stefan Noll; Michael Grieb; Frederik F. Schrey; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2011)