Characterization and modeling of Non volatile memory cells based on localized trapping materials. - Antonio Arreghini (2008)

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. - Lifang Liu; Antonio Arreghini; Geert Van den Bosch; Liyang Pan; Jan Van Houdt (Microelectron. Reliab., 2014)

Impact of Mechanical Stress on the Electrical Performance of 3D NAND. - Anastasiia Kruv; Antonio Arreghini; Mario Gonzalez; Devin Verreck; Geert Van den Bosch; Ingrid De Wolf; Arnaud Furnémont (IRPS, 2019)

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. - Franz Schanovsky; Devin Verreck; Antonio Arreghini; Gerhard Rzepa; Zlatan Stanojevic; Christian Kernstock; Oskar Baumgartner; Maarten Rosmeulen; Markus Karner (IMW, 2021)

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. - Laurent Breuil; L. Nyns; S. Rachidi; K. Banerjee; Antonio Arreghini; J. P. Bastos; S. Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. - S. Rachidi; Antonio Arreghini; Devin Verreck; G. L. Donadio; K. Banerjee; K. Katcko; Yusuke Oniki; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

Liquid Memory and the Future of Data Storage. - Maarten Rosmeulen; Cesar J. Lockhart de la Rosa; K. Willems; S. Fransen; B.-Y. Shih; Devin Verreck; V. Kalangi; F. Yasin; Harold Philipsen; Y. T. Set; N. Ronchi; W. Van Roy; et al. (IMW, 2022)

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. - Laurent Breuil; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh 005; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2023)

Enabling 3D NAND Trench Cells for Scaled Flash Memories. - S. Rachidi; S. Ramesh; Laurent Breuil; Z. Tao; Devin Verreck; G. L. Donadio; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2023)

Gate Side Injection Operating Mode for 3D NAND Flash Memories. - Laurent Breuil; R. Izmailov; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2024)

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. - S. Rachidi; S. Ramesh; Davide Tierno; G. L. Donadio; A. Pacco; J. W. Maes; Y. Jeong; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. - Davide Tierno; Antonio Arreghini; Alicja Lesniewska; Y. Jeong; Marleen H. van der Veen; J. Stiers; N. Bazzazian; Ivan Ciofi; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)