Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. - Nicolo Ronchi; Franco Zanon; Antonio Stocco; Augusto Tazzoli; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2009)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications. - Antonio Stocco (2012)

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. - Davide Bisi; Matteo Meneghini; Antonio Stocco; Giulia Cibin; Alessio Pantellini; Antonio Nanni; Claudio Lanzieri; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2013)

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. - Davide Bisi; Antonio Stocco; Matteo Meneghini; Fabiana Rampazzo; Andrea Cester; Gaudenzio Meneghesso; Enrico Zanoni (ESSDERC, 2014)

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. - Antonio Stocco; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)