Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT. - Antony Abel Kunnath; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. - Antony Abel Kunnath; Maxime Moulin; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)