A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. - Longda Zhou; Zhaohao Zhang; Hong Yang; Zhigang Ji; Qianqian Liu; Qingzhu Zhang; Eddy Simoen; Huaxiang Yin; Jun Luo; Anyan Du; Chao Zhao; Wenwu Wang 006 (IRPS, 2021)

Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance. - Lianlian Li; Lei Cao; Xuexiang Zhang; Qingkun Li; Zhenhua Wu; Meihe Zhang; Yunjiao Bao; Peng Wang; Renjie Jiang; Anyan Du; Qingzhu Zhang; Huaxiang Yin (Microelectron. J., 2025)