A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels. - Yuying Wang; Aohang Zhang; Peng Jian; Wensuo Chen (IEICE Electron. Express, 2022)

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. - Jiaweiwen Huang; Wensuo Chen; Shenglei Zhao; Qisheng Yu; Aohang Zhang; Kunfeng Zhu; Jian Li (Microelectron. J., 2024)

Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top. - Zhigang Shen; Pengfei Liao; Qisheng Yu; Jiaweiwen Huang; Aohang Zhang; Wensuo Chen (Microelectron. J., 2024)

Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position. - Yuying Wang; Zhengyuan Zhang; Peng Jian; Pengfei Liao; Aohang Zhang; Kunfeng Zhu; Wensuo Chen (Microelectron. J., 2024)

Comprehensive experimental study on Schottky contact super barrier rectifier. - Qisheng Yu; Zhengyuan Zhang; Aohang Zhang; Jiaweiwen Huang; Wensuo Chen (Microelectron. J., 2024)