Gated base structure for improved current gain in SiC bipolar technology. - B. Gunnar Malm; Hossein Elahipanah; Arash Salemi; Mikael Östling (ESSDERC, 2017)

Design Strategies for Rugged SiC Power Devices. - Diang Xing; Tianshi Liu; Susanna Yu; Minseok Kang; Arash Salemi; Marvin H. White; Anant K. Agarwal (IRPS, 2019)

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. - Tianshi Liu; Shengnan Zhu; Susanna Yu; Diang Xing; Arash Salemi; Minseok Kang; Kristen Booth; Marvin H. White; Anant K. Agarwal (IRPS, 2020)

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. - Susanna Yu; Tianshi Liu; Shengnan Zhu; Diang Xing; Arash Salemi; Minseok Kang; Kristen Booth; Marvin H. White; Anant K. Agarwal (IRPS, 2020)

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. - Shengnan Zhu; Tianshi Liu; Marvin H. White; Anant K. Agarwal; Arash Salemi; David Sheridan (IRPS, 2021)