2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods. - José A. Carrillo 001; Irene M. Gamba; Armando Majorana; Chi-Wang Shu (J. Comput. Phys., 2006)

Deterministic Simulation of the Boltzmann-Poisson System in GaAs-Based Semiconductors. - María J. Cáceres; José A. Carrillo 001; Armando Majorana (SIAM J. Sci. Comput., 2006)

Discontinuous Galerkin Deterministic Solvers for a Boltzmann-Poisson Model of Hot Electron Transport by Averaged Empirical Pseudopotential Band Structures. - José A. Morales Escalante; Irene M. Gamba; Yingda Cheng; Armando Majorana; Chi-Wang Shu; James R. Chelikowsky (CoRR, 2015)

DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene. - Vittorio Romano; Armando Majorana; Marco Coco (J. Comput. Phys., 2015)