Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. - A. Sozza; Arnaud Curutchet; Christian Dua; Nathalie Malbert; Nathalie Labat; André Touboul (Microelectron. Reliab., 2006)

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. - Laurent Brunel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat; Benoit Lambert (ESSDERC, 2012)

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. - Benoit Lambert; Nathalie Labat; Dominique Carisetti; Serge Karboyan; Jean-Guy Tartarin; Jim Thorpe; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Eddy Latu-Romain; Michel Mermoux (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. - M. Rzin; Nathalie Labat; Nathalie Malbert; Arnaud Curutchet; Laurent Brunel; Benoit Lambert (Microelectron. Reliab., 2015)

Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. - Pamela Del Vecchio; Arnaud Curutchet; Yannick Deshayes; M. Bettiati; F. Laruelle; Nathalie Labat; Laurent Béchou (Microelectron. Reliab., 2015)

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. - H. Lakhdhar; Nathalie Labat; Arnaud Curutchet; Nicolas Defrance; Marie Lesecq; Jean-Claude de Jaeger; Nathalie Malbert (Microelectron. Reliab., 2016)

A two-step de-embedding method valid up to 110 GHz. - J. Bazzi; H. Kassem; Arnaud Curutchet; Franck Pourchon; N. Derrier; Didier Céli; Thomas Zimmer (ICM, 2017)

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (Microelectron. Reliab., 2017)

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (IRPS, 2018)