A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology. - Arno Hemelhof; Sehoon Park; Yang Zhang 081; Mark Ingels; Giuseppe Gramegna; Kristof Vaesen; Dongyang Yan; Piet Wambacq (BCICTS, 2024)