Enhanced power cycling performance of IGBT modules with a reinforced emitter contact. - Emre Özkol; Franziska Brem; Chunlei Liu 009; Samuel Hartmann; Arnost Kopta (Microelectron. Reliab., 2015)

The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination. - Munaf Rahimo; Frank Richter; Fabian Fischer 002; Umamaheswara Vemulapati; Arnost Kopta; Chiara Corvasce; Silvan Geissmann; Marco Bellini; Martin J. Bayer; Friedhelm Bauer (Microelectron. Reliab., 2016)

Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. - Paula Diaz Reigosa; Daniel Prindle; Gontran Pâques; Silvan Geissmann; Francesco Iannuzzo; Arnost Kopta; Munaf Rahimo (Microelectron. Reliab., 2016)

The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection. - Charalampos Papadopoulos; Chiara Corvasce; Arnost Kopta; Daniel Schneider; Gontran Pâques; Munaf Rahimo (Microelectron. Reliab., 2018)