Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. - Aarti Rathi; Barry J. O'Sullivan; R. ElKashlan; B. Kazemi Esfeh; Arturo Sibaja Hernandez; Hao Yu; AliReza Alian; Sachin Yadav 001; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2025)