Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs. - Arvydas Matulionis (IEICE Trans. Electron., 2006)

Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel. - Arvydas Matulionis; Juozapas Liberis; Ilona Matulioniene; Mindaugas Ramonas; Emilis Sermuksnis (Proc. IEEE, 2010)

Window for better reliability of nitride heterostructure field effect transistors. - Arvydas Matulionis; Juozapas Liberis; Emilis Sermuksnis; Linas Ardaravicius; Artur Simukovic; Cemil Kayis; Congyong Zhu; Romualdo Ferreyra; Vitaliy Avrutin; Ümit Özgür; Hadis Morkoç (Microelectron. Reliab., 2012)