Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. - Asad Fayyaz; Li Yang; Michele Riccio; Alberto Castellazzi; Andrea Irace (Microelectron. Reliab., 2014)

High temperature pulsed-gate robustness testing of SiC power MOSFETs. - Asad Fayyaz; Alberto Castellazzi (Microelectron. Reliab., 2015)

SiC power MOSFETs performance, robustness and technology maturity. - Alberto Castellazzi; Asad Fayyaz; Gianpaolo Romano; Li Yang; Michele Riccio; Andrea Irace (Microelectron. Reliab., 2016)

Body diode reliability investigation of SiC power MOSFETs. - Asad Fayyaz; Gianpaolo Romano; Alberto Castellazzi (Microelectron. Reliab., 2016)

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. - Alberto Castellazzi; Asad Fayyaz; Siwei Zhu; Thorsten Oeder; Martin Pfost (IRPS, 2018)

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. - Besar Asllani; Asad Fayyaz; Alberto Castellazzi; Hervé Morel; Dominique Planson (Microelectron. Reliab., 2018)

Avalanche ruggedness of parallel SiC power MOSFETs. - Asad Fayyaz; Besar Asllani; Alberto Castellazzi; Michele Riccio; Andrea Irace (Microelectron. Reliab., 2018)

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. - Besar Asllani; Alberto Castellazzi; Oriol Avino-Salvado; Asad Fayyaz; Hervé Morel; Dominique Planson (IRPS, 2019)