Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications. - Ashwin Tunga; Xiuling Li; Shaloo Rakheja (DRC, 2021)

Large-Signal Modeling of GaN HEMTs using Fermi Kinetics and Commercial Hydrodynamics Transport. - E. White; Ashwin Tunga; Nicholas C. Miller; Matt Grupen; John D. Albrecht; Shaloo Rakheja (DRC, 2023)

Modeling of Content addressable memory using 2D Reconfigurable Transistors. - Ashwin Tunga; Junzhe Kang; Ziing Zhao; Ankit Shukla 002; Wenjuan Zhu 002; Shaloo Rakheja (DRC, 2024)