A Low Leakage SRAM Bitcell Design Based on MOS-Type Graphene Nano-Ribbon FET. - Mahmood Uddin Mohammed; Athiya Nizam; Liaquat Ali; Masud H. Chowdhury (ISCAS, 2019)

FinFET based SRAMs in Sub-10nm domain. - Mahmood Uddin Mohammed; Athiya Nizam; Liaquat Ali; Masud H. Chowdhury (Microelectron. J., 2021)