A 6-ns 256-kb BiCMOS TTL SRAM. - Takashi Akioka; Atsushi Hiraishi; Tatsumi Yamauchi; Yuji Yokoyama; Shigeru Takahashi; Masahiro Iwamura; Yutaka Kobayashi; Akira Ide; Nobuyuki Gotou; Kazunori Onozawa; Hideaki Uchida (IEEE J. Solid State Circuits, 1991)

Preferable Improvements and Changes to FB-DiMM High-Speed Channel for 9.6Gbps Operation. - Atsushi Hiraishi; Toshio Sugano; Hideki Kusamitsu (ASP-DAC, 2007)