Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz. - Austin Hickman; Reet Chaudhuri; Neil Moser; Michael Elliott; Kazuki Nomoto; Lei Li 023; James C. M. Hwang; Huili Grace Xing; Debdeep Jena (DRC, 2021)

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. - Eungkyun Kim; Zexuan Zhang; Jashan Singhal; Kazuki Nomoto; Austin Hickman; Masato Toita; Debdeep Jena; Huili Grace Xing (DRC, 2022)

AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. - Joseph Casamento; Kazuki Nomoto; Thai-Son Nguyen; Hyunjea Lee; Chandrasekhar Savant; Lei Li 023; Austin Hickman; Takuya Maeda; Yu-Tsun Shao; Jimy Encomendero; Ved Gund; Timothy Vasen; et al. (BCICTS, 2023)