Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications. - Avinash Lahgere; Dhruv Shikhar Gupta (IEEE Access, 2023)

Evaluation of Radiation Resilience, Performance, and Vmin of Sub-3 nm FSFET Based SRAM Arrays. - Hafeez Raza; Mahdi Benkhelifa; Koshal Kumar; Shivendra Singh Parihar; Yogesh Singh Chauhan; Hussam Amrouch; Avinash Lahgere (IEEE Trans. Computers, 2026)