Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. - M. Fadlallah; Arkadiusz Szewczyk; C. Giannakopoulos; B. Cretu; Frederic Monsieur; T. Devoivre; Jalal Jomaah; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Origin of hot carrier degradation in advanced nMOSFET devices. - B. Cretu; Francis Balestra; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2002)