Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing. - B. D. Rummel; C. E. Glaser; R. T. Gurule; M. Groves; A. T. Binder; R. Floyd; L. Yates; K. J. Reilly; R. J. Kaplar (IRPS, 2024)

Interfacial GaOx in $ text{Al}_{2} mathrm{O}_{3}/n- text{GaN}$ MOS Structures Studied by Quasi-Static CV and ToF-SIMS. - B. D. Rummel; C. E. Glaser; J. A. Ohlhausen; J. P. Klesko; M. L. Meyerson; C. Remple; R. J. Kaplar (IRPS, 2025)